China’s YMTC claims 3D NAND chip breakthrough
A Chinese memory space chip maker has put rivals Micron and SK hynix on notice along with claims it has self-developed technology that has improved its 3D NAND semiconductor’s performance by 50% while trimming power consumption by 25%.
Yangtze Memory Technology (YMTC), founded within 2016 and located in Wuhan, on Wed announced its fourth-generation NAND chips, referred to as X3-9070, are the initial to feature 232 layers of storage cells, according to Chinese media reports. The claimed performance improvements are over its third-generation chips released in April 2020.
The announcement said the particular X3-9070 is the best bit density adobe flash product in the company’s history, enabling 1 terabyte (TB) storage capacity in an ultra-compact mono-die footprint. The particular press release did not, however , state exactly how a lot of layers of storage cells the X3-9070 chip has stacked.
The blog post China’ s YMTC states 3D NAND nick breakthrough appeared first on Asian countries Times .